By stacking four 4Gb LPDDR2 components in a single LPDDR2 package, Samsung can deliver 2GB multi-layer memory solutions that boast thickness of 0.8mm. This new package is approximately 20% thinner than 2GB packages that stack four 30nm-class 4Gb LPDDR2 chips. The new 2GB package can process data at up to 1066MHz and thanks to thinner process technology promises to provide better energy efficiency compared to previous multi-layer LPDDR2 memory solutions.

Economic benefits of the new 20nm-class 4Gb LPDDR2 are projected to help speed up the growth of the 4Gb DRAM market. Samsung now expects the newly introduced 20nm-class 4Gb LPDDR2 will rapidly replace 30nm-class 2Gb-based 1GB LPDDR2 that was in limited supply at the 0.8 mm thickness.

According to IHS iSuppli, shipments of 4Gb LPDDR2 will steadily increase, taking approximately 13% of total mobile DRAM shipments in 2012, 49% in 2013 and 63% in 2014, with 4Gb mobile DRAM monolithic becoming the mainstream chip in the Mobile DRAM market around the end of 2013.
“In the second half of this year, we expect to strongly increase the portion of 20nm-class DRAM within our overall DRAM output to make the 4Gb DRAM line-up the mainstream product in DRAM production, and therefore keeping the leadership position in the premium market and strengthening our competitive edge,” added Wanhoon Hong.
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